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TPS1100D
| Texas Instruments |
单路P沟道增强方式MOSFET
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|
暂无
(武汉库存)
|
| 1+ | CNY 10.80 | | 25+ | CNY 9.20 | | 50+ | CNY 8.60 | | 100+ | CNY 8.10 | | 250+ | CNY 7.83 | | 500+ | CNY 7.56 | | 1000+ | CNY 7.02 |
|
|
查看详细
| 1 | -15 | -1.6 | 180 | P沟道 | SOIC-8/-40~85 |
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TPS1100DR
| Texas Instruments |
单路P沟道增强方式MOSFET
|
|
暂无
(武汉库存)
|
| 1+ | CNY 9.00 | | 25+ | CNY 7.70 | | 50+ | CNY 7.20 | | 100+ | CNY 6.75 | | 250+ | CNY 6.53 | | 500+ | CNY 6.30 | | 1000+ | CNY 5.85 |
|
|
查看详细
| 1 | -15 | -1.6 | 180 | P沟道 | SOIC-8/-40~85 |
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TPS1120D
| Texas Instruments |
双路P沟道增强方式MOSFET
|
|
暂无
(武汉库存)
|
| 1+ | CNY 15.00 | | 25+ | CNY 12.80 | | 50+ | CNY 12.00 | | 100+ | CNY 11.25 | | 250+ | CNY 10.88 | | 500+ | CNY 10.50 | | 1000+ | CNY 9.75 |
|
|
查看详细
| 2 | -15 | -1.7 | 180 | P沟道 | SOIC-8/-40~85 |
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TPS1120DR
| Texas Instruments |
双路P沟道增强方式MOSFET
|
|
暂无
(武汉库存)
|
| 1+ | CNY 12.40 | | 25+ | CNY 10.50 | | 50+ | CNY 9.90 | | 100+ | CNY 9.30 | | 250+ | CNY 8.99 | | 500+ | CNY 8.68 | | 1000+ | CNY 8.06 |
|
|
查看详细
| 2 | -15 | -1.7 | 180 | P沟道 | SOIC-8/-40~85 |
|
|
TPS1101D
| Texas Instruments |
单路P沟道增强方式MOSFET
|
|
暂无
(武汉库存)
|
| 1+ | CNY 16.00 | | 25+ | CNY 13.60 | | 50+ | CNY 12.80 | | 100+ | CNY 12.00 | | 250+ | CNY 11.60 | | 500+ | CNY 11.20 | | 1000+ | CNY 10.40 |
|
|
查看详细
| 1 | -15 | -2.3 | 90 | P沟道 | SOIC-8/-40~125 |
|
CSD16321Q5
| Texas Instruments |
25V,100A,N沟道NexFET™功率MOSFET
|
|
暂无
(武汉库存)
|
暂无
|
|
查看详细
| 1 | 25 | 100 | 2.8 | N沟道 | VSON-8/-55~150 |
|
CSD17301Q5A
| Texas Instruments |
30V,28A,N沟道功率MOSFET
|
|
暂无
(武汉库存)
|
暂无
|
|
查看详细
| 1 | 30 | 28 | 2.9 | N沟道 | VSONP-8/-55~150 |
|
CSD86330Q3D
| Texas Instruments |
同步降压NexFET™电源块MOSFET对
|
|
暂无
(武汉库存)
|
暂无
|
|
查看详细
| 2 | 25/25 | - | 8.8/3.3 | N沟道 | LSON-CLIP-8/-55~150 |
|
CSD17307Q5A
| Texas Instruments |
30V,73A,N沟道NexFET™功率MOSFET
|
|
暂无
(武汉库存)
|
暂无
|
|
查看详细
| 1 | 30 | 73 | 9.7 | N沟道 | VSONP-8/-55~150 |
|
CSD17553Q5A
| Texas Instruments |
30V,23.5A,N沟道功率MOSFET
|
|
暂无
(武汉库存)
|
暂无
|
|
查看详细
| 1 | 30 | 23.5 | 3.5 | N沟道 | VSONP-8/-55~150 |