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SCT020H120G3AG
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Manufacturer: STMicroelectronics
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  • Specifications
  • Ducuments
VBR(V):1200
rDS(on)(mΩ):28
Id(on)(Max.)(A):100
Polarity:-
Package/Temperature(℃):H2PAK-7/-55~175
Description:Automotive-grade silicon carbide Power MOSFET 1200V
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