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Home  »  All Products  »  Discrete  »  MOSFETs  »  VISHAY, Power MOSFET  »  Si4101DY-T1-GE3
 
Si4101DY-T1-GE3
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Manufacturer: Vishay
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  • Specifications
  • Ducuments
VBR(V)：-30
rDS(on)(Max.)(mΩ)：6
Id(on)(Max.)(A)：-25.7
Polarity：P-Channel
Package/Temperature(℃)：SO-8/-55~150
Description：P-Ch Power MOSFET 6mΩ,-30V,-25.7A
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