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Home  »  All Products  »  Memory  »  FLASH  »  ST, Parallel FLASH Memory  »  M29W160EB70N6E-N
 
M29W160EB70N6E-N
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Manufacturer: STMicroelectronics
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  • Specifications
  • Ducuments
Vcc(V)：2.7~3.6
Density(bit)：16M
Structure：x 8
Interface：Parallel
Random Access(ns)：70
Iq(μA)：10
Erase/Write Cycles(Max.)：100000
Data Retention(Year)：20
Package/Temperature(℃)：TSOP-48/-40~85
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